Study on the high-power DFB semiconductor laser based on sampled moiré grating
- Resource Type
- Conference
- Authors
- Liu, Shengping; Ma, Yuxin; Chen, Min; Zhao, Yong; Shi, Yuechun; Chen, Xiangfei
- Source
- 2020 International Conference on UK-China Emerging Technologies (UCET) UK-China Emerging Technologies (UCET), 2020 International Conference on. :1-4 Aug, 2020
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Fields, Waves and Electromagnetics
Power lasers
Distributed feedback devices
Laser feedback
Laser modes
Silicon photonics
Gratings
Gas lasers
distributed feedback lasers
sampled moiré grating
laser array
- Language
We review a new kind of distributed feedback (DFB) semiconductor laser based on sampled moiré grating (SMG). It has some significant advantages such as good singlelongitudinal-mode (SLM) operation, suppressing spatial hole burning and compact structure. A four-channel DFB laser array based on SMG has been experimentally demonstrated. When the injected current exceeds 400 mA, the output power of the SMG-DFB laser array is more than 120 mW. However, the random facet phase induced by facet coatings can decrease the SLM yield and change the lasing wavelength. We proposed a method to improve the single mode stability via replacing the high-reflectivity coating with anti-reflection coated integrated grating reflector. The proposed high-power SLM DFB semiconductor laser and laser array may be beneficial for the silicon photonic chips that suffer from high light scattering loss.