TCAD simulation of gate-enclosed MOSFET for terahertz detector
- Resource Type
- Conference
- Authors
- Zhu, Yingjie; Ji, Xiaoli; Liao, Yiming; Wu, Fuwei; Yan, Feng
- Source
- 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-3 Oct, 2014
- Subject
- Components, Circuits, Devices and Systems
Logic gates
MOSFET
CMOS integrated circuits
CMOS technology
Detectors
Educational institutions
Abstracts
- Language
The source parasitic capacitor significantly influences the terahertz responsivity for CMOS terahertz detector. In this paper, the gate-enclosed MOSFET is used for terahertz signal detection in order to reduce the source parasitic capacitor. 3D-TCAD simulation reveals that the gate-enclosed structure improves the voltage responsivity (Rv) of the THz detectors and reduces noise-equivalent power (NEP) effectively by comparing with the equal conventional MOSFET detectors. A maximum Rv of 3 kV/W and a minimum NEP of 42pW/√Hz are achieved for the gate-enclosed nMOSFETs implemented in 0.18µm CMOS technology.