Advanced physical models for widegap device simulation
- Resource Type
- Conference
- Authors
- Li, Simon; Dolny, Gary; Fue, Yue
- Source
- 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2016 IEEE International Conference on. :203-207 Aug, 2016
- Subject
- Components, Circuits, Devices and Systems
Decision support systems
Conferences
Electron devices
Solid state circuits
Leakage currents
Solid modeling
Electron traps
- Language
Wide bandgap materials such as SiC and GaN are regarded as second and third generations of semiconductors with potential to displace silicon in future power electronic applications. Simulation of wide bandgap devices within the framework of drift-diffusion theory poses unique challenges which we shall address in this paper. For SiC, we tackle the issue of numerical convergence at low temperatures as well as temperature dependent mobility model selection in a JBS structure. For GaN, interface and buffer layer traps are believed to be responsible for many pronounced effects such as reverse gate leakage and current collapse. We present formal theories and numerical simulation results related to trap effects in this paper. Experimental verifications are provided wherever available.