Theorerical utmost performance of (100) mid-wave HgCdTe photodetectors
- Resource Type
- Conference
- Authors
- Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kopytko, M.; Grodecki, K.; Gomulka, E.
- Source
- 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Numerical Simulation of Optoelectronic Devices (NUSOD), 2016 International Conference on. :131-132 Jul, 2016
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
II-VI semiconductor materials
Cadmium compounds
Gallium arsenide
Doping
Detectors
Substrates
Voltage measurement
- Language
- ISSN
- 2158-3242
Except Auger 7, p-type HgCdTe is mostly limited by technology dependent Shockley-Read-Hall generation-recombination processes. One of the ways to reduce the trap density is a growth of the (100) HgCdTe on GaAs substrates. That orientation allows reaching lower carrier concentration ∼ 5×10 14 cm −3 in comparison to the commonly used (111) orientation ∼ 5×10 15 cm −3 in mid-wave infrared range. In addition Shockley-Read-Hall traps density could be reduced to the level of ∼ 4.4×10 8 cm −3 . The theoretical simulations related to the utmost performance of the (100) HgCdTe Auger suppressed structures are presented. Dark current is reported to be reduced by more than one order of magnitude within the range ∼ 6×10 −2 −3×10 −3 A/cm 2 . Detectivity increases within range ∼ 3−12×10 11 cmHz 1/2 /W (wavelength ∼ 5 μm) at temperature 200 K and voltage 200 mV.