Highly strained Ge on Si microdisks with silicon nitride stressors
- Resource Type
- Conference
- Authors
- Millar, R. W.; Gallacher, K.; Frigerio, J.; Chrastina, D.; Isella, G.; Paul, D.J.
- Source
- 2015 IEEE 12th International Conference on Group IV Photonics (GFP) Group IV Photonics (GFP), 2015 IEEE 12th International Conference on. :65-66 Aug, 2015
- Subject
- Photonics and Electrooptics
Silicon
Silicon nitride
CMOS integrated circuits
Germanium
Cavity resonators
Tensile strain
- Language
- ISSN
- 1949-2081
1949-209X
Resonant emission is observed up to ∼2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.