Reliable design of SiC MOSFET power modules: experimental characterization for aging prediction
- Resource Type
- Conference
- Authors
- Fukunaga, Shuhei; Castellazzi, Alberto; Funaki, Tsuyoshi
- Source
- 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia) Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia), 2022 International. :151-156 May, 2022
- Subject
- Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
Degradation
MOSFET
Silicon carbide
Multichip modules
Reliability engineering
Silicon
Power electronics
Reliability
multi-chip power modules
silicon carbide (SiC) power MOSFETs
electro-thermal modelling
- Language
This paper discusses the development of multi-chip silicon carbide semiconductor assemblies meeting the lifetime requirements of key electrical power conversion applications. Because of intrinsic differences with the established silicon technology, the need exists to devise SiC-bespoke design and validation methodologies. This work first assesses the state-of-the-art in electro-thermal parameters spread for both planar-gate and trench-gate type transistors; second, it develops a physical simulation model, which can be used to investigate the relation between device progressive degradation patterns and the initial parameters value spread.