Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems
- Resource Type
- Conference
- Authors
- Sarkozy, Stephen; Mei, Xiaobing; Yoshida, Wayne; Liu, Po-Hsin; Lee, Ling-Shine; Zhou, Joe; Leong, Kevin; Radisic, Vesna; Deal, William; Lai, Richard
- Source
- 2013 International Conference on Indium Phosphide and Related Materials (IPRM) Indium Phosphide and Related Materials (IPRM), 2013 International Conference on. :1-2 May, 2013
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
General Topics for Engineers
MMICs
Indium phosphide
HEMTs
Substrates
MODFETs
Microwave amplifiers
InP
HEMT
THz
fmax
Transistor
mmW
LNA
PA
- Language
- ISSN
- 1092-8669
This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production