Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies
- Resource Type
- Conference
- Authors
- Gutierrez-Aitken, Augusto; Chang-Chien, Patty; Scott, Dennis; Hennig, Kelly; Kaneshiro, Eric; Nam, Peter; Cohen, Neir; Ching, Daniel; Thai, Khanh; Oyama, Bert; Zhou, Joe; Geiger, Craig; Poust, Ben; Parlee, Matthew; Sandhu, Randy; Phan, Wen; Oki, Aaron; Kagiwada, Reynold
- Source
- 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE. :1-4 Oct, 2010
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Indium phosphide
Heterojunction bipolar transistors
CMOS integrated circuits
Silicon
Compounds
Resistance
Differential amplifiers
- Language
- ISSN
- 1550-8781
2374-8443
Northrop Grumman Aerospace Systems (NGAS) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in dynamic range and bandwidth of high performance mixed signal circuits.