ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
- Resource Type
- Conference
- Authors
- Wu, Wei-Min; Chen, Shih-Hung; Putcha, Vamsi; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Yadav, Sachin; Parvais, Bertrand; Alian, AliReza; Collaert, Nadine; Ker, Ming-Dou; Groeseneken, Guido
- Source
- 2021 43rd Annual EOS/ESD Symposium (EOS/ESD) EOS/ESD Symposium (EOS/ESD), 2021 43rd Annual. 43:1-7 Sep, 2021
- Subject
- Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Failure analysis
HEMTs
Logic gates
Electrostatic discharges
Thermal conductivity
Robustness
Wide band gap semiconductors
- Language
In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robustness.