Total Ionizing Dose Effect in LDMOS Oxides and Devices
- Resource Type
- Periodical
- Authors
- Borel, T.; Furic, S.; Leduc, E.; Michez, A.; Boch, J.; Touboul, A.; Azais, B.; Danzeca, S.; Dusseau, L.
- Source
- IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(7):1606-1611 Jul, 2019
- Subject
- Nuclear Engineering
Bioengineering
Logic gates
Degradation
Electron traps
Total ionizing dose
Transistors
Integrated circuits
Buried oxide (BOX)
laterally diffused metal–oxide–semiconductors (LDMOS)
radiation effects
shallow trench isolation (STI)
total ionizing dose (TID)
trapped charges
- Language
- ISSN
- 0018-9499
1558-1578
Laterally diffused metal–oxide–semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with 60 Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-resistance. In this paper, degradation mechanisms at play are investigated through TCAD simulation, and an explanation of the physical mechanisms for the observed degradation is proposed.