Power converters utilizing SiC MOSFETs have attracted significant interest from the automotive industry due to their improved efficiency and power density. In this paper, a SiC lateral-channel trench (LT) MOSFET is proposed to reduce the conduction losses compared to the state-of-the-art designs. With the help of an additional lateral trench channel, the specific on-state resistance (R DS, ON ) is dramatically decreased by over 40%. Under extensive simulations, the device's blocking capability and short circuit robustness are maintained, and the device capacitance is also analyzed to verify this design.