A High Brightness GaN Laser Array With Lateral-Corrugated Waveguides
- Resource Type
- Periodical
- Authors
- Hagino, H.; Kawaguchi, M.; Nozaki, S.; Mochida, A.; Kano, T.; Yamaguchi, H.; Fukakusa, M.; Takigawa, S.; Koga, T.; Katayama, T.
- Source
- IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 34(15):779-782 Aug, 2022
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power generation
Brightness
Waveguide lasers
Laser modes
Laser beams
Refractive index
Gallium nitride
Beam quality
GaN
lateral transverse mode
waveguide
- Language
- ISSN
- 1041-1135
1941-0174
A high brightness GaN laser diode array with an output power of 78 W and an average lateral beam-quality factor of 3.5 for 38 emitters has been realized by the new design method of lateral-corrugated waveguides (LCWGs). The LCWG we propose was optimized by calculating both output power and beam-quality so as to maximize lateral brightness. As a result, the maximum output power of 117 W was obtained and a lateral brightness increased 1.6 times compared to the previous LCWG array. Finally, a high brightness GaN laser source was achieved by combining the beams from 38 emitters for GaN laser processing.