13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate
- Resource Type
- Conference
- Source
- 2020 IEEE International Solid-State Circuits Conference - (ISSCC) Solid-State Circuits Conference - (ISSCC), 2020 IEEE International. :218-220 Feb, 2020
- Subject
Components, Circuits, Devices and Systems Flash memories Reliability Three-dimensional displays Programming Tuning Threshold voltage Calibration - Language
- ISSN
- 2376-8606