In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 10 18 -10 20 cm −3 . Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×10 17 cm −3 -1×10 18 cm −3 . In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.