Active MMIC Transversal Filter-Based Negative Group Delay/Non-Foster Circuit in 0.1-µm GaAs pHEMT Technology
- Resource Type
- Conference
- Authors
- Zhu, Minning; Chen, Austin Ying-Kuang; Hsiao, Chiao-Yun; Kuo, Chien-Nan; Wu, Chung-Tse Michael
- Source
- 2021 IEEE MTT-S International Microwave Symposium (IMS) Microwave Symposium (IMS), 2021 IEEE MTT-S International. :681-684 Jun, 2021
- Subject
- Fields, Waves and Electromagnetics
Power demand
PHEMTs
Gallium arsenide
Bandwidth
Transversal filters
Capacitance
Stability analysis
distributed amplifier (DA)
negative capacitance
negative group delay (NGD)
non-Foster element
GaAs MMIC
- Language
- ISSN
- 2576-7216
A new kind of negative group delay (NGD)/non-Foster circuit using monolithic microwave integrated circuit (MMIC) technology is presented. The proposed design is based on an active transversal filter topology using a distributed amplifier (DA) with a cascode configuration at each stage of gain cells, realized by using WIN's 0.1-um GaAs pseudomorphic high electron mobility transistor (pHEMT) process. Furthermore, a forward-biased Schottky barrier diode (SBD) is utilized as a phase shifter to adjust the absolute phase of S21. By properly applying the gate bias voltage and controlling the phase shifter, the proposed NGD circuit can synthesize a negative capacitance of −0.3 pF with a bandwidth of 500 MHz at around 5 GHz while ensuring unconditional stability. The fabricated MMIC NGD/non-Foster circuit has a footprint of 3. 05×3. 15mm 2 with a power consumption of 125 mW. Measurement and simulation results show great agreement with each other.