Enhance Gate Reliability and Threshold Voltage Stability of p-GaN Gate High-Electron-Mobility Transistors
- Resource Type
- Conference
- Authors
- Chen, Haohao; Chen, Junting; Wang, Chengcai; Jiang, Zuoheng; Hua, Mengyuan
- Source
- 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2023 7th IEEE. :1-3 Mar, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Bridge circuits
Logic gates
HEMTs
Threshold voltage
Gate leakage
Manufacturing
MODFETs
GaN HEMT
p-GaN
gate reliability
VTH stability
- Language
Gate reliability and threshold voltage instability issues were investigated in the enhancement-mode p-GaN gate high-electron-mobility transistors (HEMTs). A n-GaN/ p-GaN gate structure is proposed to effectively reduce the gate leakage and enlarge the gate swing of the p-GaN gate HEMTs. The $V_{\text{TH}}$ tunability and stability of the p-GaN gate HEMTs are also systematically investigated. With a p- FET bridge, wide range $V_{\text{TH}}$ can be achieved, as well as eliminated hole-deficiency-induced $V_{\text{TH}}$ shifts.