Fabrication of 1.55 /spl mu/m In/sub 0.53/Ga/sub 0.47/As/In/sub 0.53/(Ga/sub 0.6/Al/sub 0.4/)/sub 0.47/As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers
- Resource Type
- Conference
- Authors
- Jae Su Yu; Jin Dong Song; Jong Min Kim; Seong Ju Bae; Yong Tak Lee
- Source
- Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :639-642 2002
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Rapid thermal annealing
Threshold current
Temperature
Optical device fabrication
Indium gallium arsenide
Quantum well devices
Digital alloys
Rapid thermal processing
Electric variables
Thermal degradation
- Language
- ISSN
- 1092-8669
We fabricated MBE-grown InGaAs/InGaAlAs SCH MQW ridge-waveguide lasers with InGaAlAs digital alloy layers after post-growth rapid thermal annealing using an SiO/sub 2/ capping layer. The lasers fabricated on as-grown substrate and annealed substrates were compared by I-V and I-L measurements. The electrical characteristics of the annealed lasers were not degraded by the annealing process compared to those of as-grown lasers. The threshold current and slope efficiency of the fabricated lasers were improved with the increase of RTA temperature. For a 10-/spl mu/m-wide and 600-/spl mu/m-length laser fabricated after an RTA of 850/spl deg/C for 45 sec, the internal quantum efficiency of about 27.6% per facet and the threshold current density of about 1.53 kA/cm/sup 2/ were obtained at room temperature.