Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature
- Resource Type
- Conference
- Authors
- Chahdi, Hassane Ouazzani; Helli, Omar; Bourzgui, Nour-Eddine; Breuil, Leo; Danovitch, David; Voss, Paul L.; Sundaram, Suresh; Aubry, Vincent; Halfaya, Yacine; Ougazzaden, Abdallah; Salvestrini, Jean-Paul; Maher, Hassan; Soltani, Ali
- Source
- 2019 IEEE SENSORS SENSORS, 2019 IEEE. :1-4 Oct, 2019
- Subject
- Engineering Profession
General Topics for Engineers
HEMT
sensors
GaN
H2
O2
fast detection
quantification
high temperature
- Language
- ISSN
- 2168-9229
Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify H 2 (1.5-10%) and O 2 (1.5-100%) species at high temperature (500 °C). The metrics ∆I/∆t measured within the 5 first seconds of the transient response to the target gas exposure is used to quantify the performance of the sensors. A linear relation between ∆I/∆t and gas concentration is found. ∆I/∆t increases with gas concentration and decreases at high temperature. Sensor sensitivity increases when gas concentration increases. For H 2 gas, it is noticed that the sensitivity increases when temperature increases. Sensors response and recovery times decrease as gas concentration increases and decrease when temperature decreases.