200-W GaN PA Design Based on Accurate Multicell Transistor Modeling
- Resource Type
- Conference
- Authors
- Vadala, V.; Raffo, A.; Bosi, G.; Barsegyan, A.; Custer, J.; Formicone, G.; Walker, J.; Vannini, G.
- Source
- 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 International Microwave Symposium - IMS 2022, 2022 IEEE/MTT-S. :378-381 Jun, 2022
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Microwave measurement
Power measurement
Microwave FETs
Power amplifiers
Predictive models
Microwave theory and techniques
Size measurement
microwave FET
nonlinear transistor modeling
power amplifiers
- Language
- ISSN
- 2576-7216
In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.