A compact model for multi-island single electron transistors
- Resource Type
- Conference
- Authors
- Chi, Yaqing; Zhong, Haiqin; Chao Zhang; Fang, Liang
- Source
- 2010 3rd International Nanoelectronics Conference (INEC) Nanoelectronics Conference (INEC), 2010 3rd International. :1132-1133 Jan, 2010
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Single electron transistors
Circuit simulation
Tunneling
Large-scale systems
Voltage
Temperature
Character generation
Electrodes
Distributed processing
Concurrent computing
- Language
- ISSN
- 2159-3523
2159-3531
Multi-island single electron transistor (MISET) is a kind of single electron transistor (SET), which has advantages of the room temperature operating. A novel semi-empirical compact model for MISET is proposed. The new approach combines the orthodox theory of single electron tunneling for single coulomb island and a novel empirical analysis for a chain of coulomb islands. The model is verified by the Monte-Carlo method in SIMON simulator, and is much faster than the traditional multi-island SET simulator, which has the advantages for the large scale multi-island SET circuit simulation.