Voltage-dependence capacitance system calculation of trench-gated IGBT
- Resource Type
- Conference
- Authors
- Luo, Guang-xiao; Zhang, Wei-dong; Qi, Lei; Zhao, Guo-liang
- Source
- 2016 International Symposium on Electromagnetic Compatibility - EMC EUROPE Electromagnetic Compatibility - EMC EUROPE, 2016 International Symposium on. :682-685 Sep, 2016
- Subject
- Fields, Waves and Electromagnetics
Capacitance
Insulated gate bipolar transistors
Silicon
Logic gates
MOS capacitors
Junctions
Capacitors
C-V characteristic
Trench-gated IGBT
Capacitance system
Voltage dependency
MOS capacitor
- Language
- ISSN
- 2325-0364
A calculation method based on the partial capacitance is proposed to analyze the voltage-dependence capacitance system of IGBT(Insulated Gate Bipolar Transistor). The capacitance system of IGBT is modeled with semiconductor junction capacitors and MOS(Metal-Oxide-Semiconductor) capacitors, and each capacitance is obtained by solving the junction voltage under the external bias voltages. At last, the proposed method is applied to a capacitance system of high-voltage IGBT cell, and the characteristics of Cge and Cgc is discussed.