A fully integrated 0.35μm SiGe power amplifier design
- Resource Type
- Conference
- Authors
- Yan, Qiong; Hua, Lin; Shi, Chun-Qi; Zhang, Run-Xi; Lai, Zong-Sheng
- Source
- 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on. :1-3 Oct, 2012
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power amplifiers
Silicon germanium
Inductors
BiCMOS integrated circuits
Metals
Heterojunction bipolar transistors
Power generation
- Language
A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS technology. The presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm, and the PAE is 17.45% at P 1dB .