A Novel Approach for Doping Two-Dimensional MOS2 Materials: ZNO Polar Interfacial Charge Transfer Method
- Resource Type
- Conference
- Authors
- Xu, Lijun; Zhan, Guohui; Luo, Kun; Shi, Yukun; Liu, Jiangtao; Wu, Zhenhua
- Source
- 2024 Conference of Science and Technology for Integrated Circuits (CSTIC) Science and Technology for Integrated Circuits (CSTIC), 2024 Conference of. :1-3 Mar, 2024
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Semiconductor device modeling
II-VI semiconductor materials
Simulation
Doping
Zinc oxide
Semiconductor process modeling
Sulfur
- Language
The performance of monolayer Mos2 devices is restricted by low carrier density and contact resistivity. It is crucial to discover a new doping technology to overcome these limitations. In this study, we have devised a novel approach for doping Mos2. By utilizing the ZnO polarity of the different elements interface, Mos2 can be doped with n/p doping. We also constructed a dual-ended device and found that this method indeed increased the intrinsic current at 4.5nm by 10 6 times.