Cryogenic Operation of Enhancement-Mode GaN HEMTs
- Resource Type
- Conference
- Authors
- Deriszadeh, Adel; Zeng, Xianwu; Wang, Zhongying; Surapaneni, Ravi Kiran; Galla, Gowtham; Ybanez, Ludovic; Pei, Xiaoze
- Source
- 2023 IEEE Workshop on Power Electronics for Aerospace Applications (PEASA) Power Electronics for Aerospace Applications (PEASA), 2023 IEEE Workshop on. :1-6 Jul, 2023
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineering Profession
Power, Energy and Industry Applications
Resistance
Temperature
Power measurement
Cryogenics
HEMTs
Transistors
Electrical resistance measurement
GaN HEMT
Cryogenic temperature
switching characterization
Double-Pulse test
Turn-on transition
Turn-off transition
- Language
This paper experimentally investigates the performance of enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) at Liquid Nitrogen temperature. The tests are performed on a commercially available GaN transistor to determine the impact of cryogenic temperatures on the transistor performance.