Dopant redistribution induced by Ni silicidation at 300/spl deg/C
- Resource Type
- Conference
- Authors
- Yu-Long Jiang; Agarwal, A.; Guo-Ping Ru; Xin-Ping Qu; Bing-Zong Li
- Source
- The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Juction technology Junction Technology, 2004. IWJT '04. The Fourth International Workshop on. :139-142 2004
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicidation
Silicides
Annealing
Temperature
Boron
Conductivity
Substrates
Transmission electron microscopy
Mass spectroscopy
Semiconductor films
- Language
The dopant (arsenic and boron) redistribution induced by Ni silicidation at 300/spl deg/C is investigated by cross-section transmission electron microscopy and secondary ion mass spectroscopy. The dopant segregation at silicide/Si interface is observed. Also a high concentration dopant peak near silicide surface is revealed and attributed to void layer formation due to Kirkendall voiding effect and volume reduction after silicidation. The re-segregation during the conversion from Ni/sub 2/Si to NiSi contributes an extra boron peak in the middle region of the formed silicide film on P+/N Si.