Voltage-control spintronics memory (VoCSM) toward development of a 4F2-cell with strained in-plane-MTJ
- Resource Type
- Conference
- Authors
- Ohsawa, Y.; Yoda, H.; Shirotori, S.; Shimizu, M.; Altansargai, B.; Sugiyama, H.; Shimomura, N.; Koi, K.; Kato, Y.; Oikawa, S.; Inokuchi, T.; Kurobe, A.
- Source
- 2019 Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2019. :145-147 Mar, 2019
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Power, Energy and Industry Applications
Magnetic tunneling
Electrodes
Strain
Computer architecture
Shape
Spintronics
Microprocessors
MRAM
MTJ
VoCSM
VCMA
SOT
SHE
- Language
We successfully demonstrated write tests in voltage-control spintronics memory (VoCSM) in which in-plane magnetic tunnel junctions (MTJs) with aspect ratio of about 1 (AR1) were used. Retention energy as large as that in MTJs with an aspect ratio of 2.5 was stored in AR1-MTJs. We controlled the strain introduced into the AR1-MTJs to store retention energy owing to strain-induced anisotropy. Results in the write tests show the possibility of high-density VoCSM using in-plane MTJs whose cell area is as small as 4F 2 .