Yield Improvement in 4X Node Technology ETOX NOR Flash by Optimizing Control Gate Related Process and Design
- Resource Type
- Conference
- Authors
- Du, Yihang; Gu, Lin; Chen, Hualun; Wang, Zhuangzhuang; Yao, Chun
- Source
- 2024 Conference of Science and Technology for Integrated Circuits (CSTIC) Science and Technology for Integrated Circuits (CSTIC), 2024 Conference of. :1-3 Mar, 2024
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Integrated circuits
Bridge circuits
Process control
Logic gates
Etching
Optimization
Antireflection coatings
Control gate
Word line bridge
Yield improvement
BARC over etching
Design
- Language
The cause of 4Xnm NOR-flash low yield and corresponding optimized manufactural process have been investigated in this paper. Some stack poly gate etching recipe splits are done to solve word line bridge formation mechanism. To solve word line bridges problem, we can increase control gate recipe organic bottom anti-reflective coating over etching time. After the process optimization, the control gate poly residues are eliminated and the chip prober yield rate is greatly improved. In addition, a novel design of inserting dummy active area under the control gate ends is proposed to eliminate the word line bridge.