Investigation of Electrical Characteristics of a Fabricated Lgad Detectors at High and Low Temperatures
- Resource Type
- Conference
- Authors
- Lu, Yupeng; Sun, Peng; Yan, Gangping; Zhang, Luoyun; Yang, Yanyu; Liu, Shuang; Xu, Gaobo; Yin, Huaxiang
- Source
- 2024 Conference of Science and Technology for Integrated Circuits (CSTIC) Science and Technology for Integrated Circuits (CSTIC), 2024 Conference of. :1-3 Mar, 2024
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Integrated circuits
Temperature
Manufacturing processes
Cooling
Detectors
Dark current
Electric variables
- Language
The High Granularity Time Detector (HGTD) project need advanced Low-Gain Avalanche Detector (LGAD) for constructing the timing precision layer in the ATLAS detector. It undergoes a strong environmental temperature impact for cooling the absorbed high-energy particles. In this paper, an investigation of the manufacturing process of LGAD detectors and their characteristics in terms of dark current and breakdown voltage at high and low temperatures are systematical explored. The behavior of carrier transport within the device at various temperature conditions was analyzed using TCAD simulation tools.