Tri-layer nanoindentation for mechanical characterization of ultra-low-k dielectrics
- Resource Type
- Conference
- Authors
- Xu, Tingge; Du, Yingjie; Lu, Hongbing; Liu, Xiao Hu; Shaw, Thomas M.; Bonilla, Griselda
- Source
- 2017 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2017 IEEE International. :1-3 May, 2017
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Finite element analysis
Dielectrics
Substrates
Load modeling
Stress
Elbow
ultra-low-k dielectric
nanoindentation
thin film
tri-layer
finite element method
- Language
- ISSN
- 2380-6338
Recently the mechanical properties of nano-porous ultra-low-k (ULK) dielectric thin films have been characterized by nanoindentation using a tri-layer sample configuration. Tetraethyl orthosilicate (TEOS) silica was coated on the fragile ULK thin film to protect it from direct contact with nanoindenter tip. In this paper, the finite element method (FEM) simulations are conducted to investigate the effect of TEOS thickness, and to propose rules to design the tri-layer sample.