High-Performance Gate-all-around Junctionless Vertical-Channel Transistors with the Ultra-low Sub-threshold Swing for Next-generation 4F2 DRAM
- Resource Type
- Conference
- Source
- 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
- Subject
Bioengineering Communication, Networking and Broadcast Technologies Components, Circuits, Devices and Systems Computing and Processing Engineered Materials, Dielectrics and Plasmas Fields, Waves and Electromagnetics Nuclear Engineering Photonics and Electrooptics Power, Energy and Industry Applications Robotics and Control Systems Signal Processing and Analysis Performance evaluation Gallium arsenide Capacitors Field effect transistors Random access memory Logic gates Next generation networking Vertical channel transistor Junction-less transistor Gate-all-around 4F2 DRAM Hexagonal capacitor - Language
- ISSN
- 2156-017X