To propel the miniaturization of the dynamic random access memories (DRAM), obtaining capacitor dielectric materials of lower equivalent oxide thickness (EOT) and lower leakage is essential. Herein, we demonstrate a CMOS compatible (complementary metal-oxide-semiconductor) post-processing method for HZO-based metal-insulator-metal (MIM) capacitors, namely, low-temperature annealing combined with electric field (E-field) cycling. The low-temperature annealing process induces crystallization of the dielectric material, while the subsequent E-field cycling method further enhances the crystallization and fine-tunes the HZO phases to achieve high-k. Compared with direct high-temperature annealing, this approach not only has a lower thermal budget which makes it compatible with the CMOS fabrication processes, it also can achieve a smaller EOT while maintaining low leakage, satisfying the requirements of the capacitor dielectric materials for the next-generation DRAM cell.