Monitoring the recovery of c-Si modules from potential-induced degradation using suns-Voc curves
- Resource Type
- Conference
- Authors
- Wilterdink, Harrison; Sinton, Ronald; Hacke, Peter; Terwilliger, Kent; Meydbray, Jenya
- Source
- 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. :2752-2755 Jun, 2016
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Monitoring
Degradation
Photovoltaic systems
Current measurement
Temperature measurement
Resistance
- Language
Potential-induced degradation (PID) has recently been shown as an important failure mode in c-Si modules. We demonstrate the utility of Suns-V oc analysis for measuring shunt effects caused by PID at the module level. Our results show an expected positive correlation between module shunt resistance and power during recovery from the degraded state.