Monolithically Integrated Extended Cavity Diode Laser emitting at 778 nm
- Resource Type
- Conference
- Authors
- Wenzel, S.; Brox, O.; Casa, P. Della; Wenzel, H.; Arar, B.; Knigge, A.; Weyers, M.; Wicht, A.
- Source
- 2022 Conference on Lasers and Electro-Optics (CLEO) Lasers and Electro-Optics (CLEO), 2022 Conference on. :1-2 May, 2022
- Subject
- Photonics and Electrooptics
Manufacturing processes
Semiconductor lasers
Lasers and electrooptics
Diode lasers
Epitaxial growth
Electrooptical waveguides
- Language
We present a monolithically integrated extended cavity diode laser at 778 nm with a 3 dB linewidth of 200 kHz @ 1 ms. This is the first successful demonstration of active layer removal in AlGaAs by a 2-step epitaxy manufacturing process.