Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz
- Resource Type
- Periodical
- Authors
- Weimann, N.G.; Johansen, T.K.; Stoppel, D.; Matalla, M.; Brahem, M.; Nosaeva, K.; Boppel, S.; Volkmer, N.; Ostermay, I.; Krozer, V.; Ostinelli, O.; Bolognesi, C.R.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(9):3704-3710 Sep, 2018
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
III-V semiconductor materials
Indium phosphide
Substrates
Heterojunction bipolar transistors
Gold
Gallium arsenide antimonide
heterojunction bipolar transistors
indium phosphide
millimeter-wave (mm-wave) integrated circuits
submillimeter-wave (sub-mm-wave) integrated circuits
- Language
- ISSN
- 0018-9383
1557-9646
We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4- $\mu \text{m}$ -wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.