Silicon-Germanium Ultrashort-Gate Transistor Performances by Electrical-Thermal Simulations
- Resource Type
- Periodical
- Authors
- Yamakiri, S.; Sugiura, T.; Yamamura, K.; Watanabe, Y.; Nakano, N.
- Source
- IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 23:361-367 2024
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Germanium
Silicon
Logic gates
Photonic band gap
Silicon germanium
Doping
Computational modeling
Nanoelectronics
numerical simulation
silicon germanium
- Language
- ISSN
- 1536-125X
1941-0085
As a replacement for conventional silicon (Si), the germanium (Ge) materials have attracted interest because Ge provides larger carrier mobility and is advantageous for high-speed switching. In this study, the silicon-germanium (SiGe) ultrashort-gate transistor performances were studied using electrical-thermal analysis. The material properties of SiGe can be modified by regulating the mole fraction in Si$_{1-x}$ Ge$_{x}$, and the different material characteristics affect the nanoscale transistor performance because channel regulation strongly depends on the bandgap energy. This study aims to reveal the structural and material designs of SiGe transistors to ensure sufficient performance and reliability.