This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10–17 dB of gain at 16–34 GHz when switched on. The off-state LNA gain is below −6 dB at 5–40 GHz resulting in 20–25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP 3 ≤24 dBm) and low noise figure is presented (NF=2.5–3.0 dB at 15–26 GHz).