Production InP MMICs for low cost, high performance applications
- Resource Type
- Conference
- Authors
- Lai, R.; Grundbacher, R.; Sawdai, D.; Uyeda, J.; Biedenbender, M.; Barsky, M.; Gutierrez-Aitken, A.; Cavus, A.; Chin, P.; Liu, P.H.; Bhorania, R.; Streit, D.; Oki, A.
- Source
- International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :598-602 2005
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Production
Indium phosphide
MMICs
Costs
Space technology
Heterojunction bipolar transistors
High power amplifiers
Low-noise amplifiers
HEMTs
Linearity
- Language
- ISSN
- 1092-8669
We report the progress of production InP MMICs for low cost, high performance applications at Northrop Grumman Space Technology (NGST). Both InP HEMT and HBT technologies are being developed on 100 mm diameter InP substrates and this development is leading to lower costs that will rival both GaAs-based MMICs including GaAs-based metamorphic technologies with superior performance. Two specific InP niche product areas will be discussed-high linearity InP HBT power amplifiers and high frequency W-band low noise amplifiers