THz InP bipolar transistors-circuit integration and applications
- Resource Type
- Conference
- Authors
- Urteaga, M.; Griffith, Z.; Pierson, R.; Rowell, P.; Young, A.; Hacker, J.; Brar, B.; Kim, S.K.; Maurer, R.; Rodwell, M.J.W
- Source
- 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017 IEEE. :1-4 Oct, 2017
- Subject
- Components, Circuits, Devices and Systems
Indium phosphide
III-V semiconductor materials
Heterojunction bipolar transistors
Power amplifiers
Integrated circuit modeling
InP HBT
terahertz
millimeter wave
submillimeter wave
power amplifiers
- Language
- ISSN
- 2374-8443
Highly-scaled Indium Phosphide (InP) transistor technologies have bandwidths extending into the terahertz (THz) frequency regime (0.3–3 THz). The high transistor bandwidth can be exploited to both extend circuit operation to THz frequencies and improve system performance at millimeter wave and sub-millimeter wave frequencies. InP heterojunction bipolar transistor (HBT) technologies offer wide bandwidths, high RF power handling and the capability to realize high levels of integration. We review integrated circuit (IC) results from Teledyne's InP HBT technologies that span frequencies from 60 GHz to >600 GHz focusing on performance benefits and applications.