A Cryogenic 12 GHz Frequency Doubler With Temperature Compensation for Trapped-Ion Quantum Computer
- Resource Type
- Periodical
- Authors
- Toth, P.; Meyer, A.; Halama, S.; Ishikuro, H.; Issakov, V.
- Source
- IEEE Transactions on Circuits and Systems II: Express Briefs IEEE Trans. Circuits Syst. II Circuits and Systems II: Express Briefs, IEEE Transactions on. 70(10):3877-3881 Oct, 2023
- Subject
- Components, Circuits, Devices and Systems
Cryogenics
Radio frequency
Qubit
Microwave circuits
Transistors
BiCMOS integrated circuits
Baluns
Freq. doubler
BiCMOS
trapped Ion QC
- Language
- ISSN
- 1549-7747
1558-3791
This brief presents a frequency doubler (FD) for a microwave-control system intended for an $^{171}\text {Yb}^{+}$ ion-trap-based quantum computer. The circuit is optimized for frequency multiplication from 11GHz to 13 GHz with a ≥29 dBc fundamental- and third harmonic rejection over the entire frequency range and peak HRR1/HRR3 of 37 dBc/ 39 dBc. This enables the microwave frequency generation to drive the hyperfine transitions in the electronic ground state of an $^{171}\text {Yb}^{+}$ ion at 12.6 GHz. Cryogenic measurements of the FD down to 4.5 K enable circuit functionality verification for the intended low-temperature operation. Additionally, insights into the cryogenic temperature effects of the employed BiCMOS technology are obtained and used to derive a biasing control methodology for constant performance in the temperature range of 300K to 4.5K. The proposed circuit is silicon-proven and fabricated in a $\mathrm {0.13~ \mu \text {m} }$ SiGe BiCMOS process, consuming a core area of only 0.034 mm2.