Hydrogen molybdenum bronzes for hole transport layers on crystalline silicon solar cells
- Resource Type
- Conference
- Authors
- Tong, Jingnan; Jiang, Yu; Song, Ning; Lim, Sean; Zi, Ouyang; Lennon, Alison
- Source
- 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. :2983-2985 Jun, 2016
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Films
Annealing
Silicon
Molybdenum
Hydrogen
Passivation
- Language
The stoichiometry of molybdenum oxide (MoOJ films needs to be controlled to ensure effective hole transport layers. If the layer is too metallic (x = 2) or too insulating (x = 3) then the layer's transport and passivation properties can be impacted. We report on a method of forming MoO x films on crystalline silicon wafer surfaces by spin-coating hydrogen molybdenum bronze solutions. It is shown that an ∼ 2 nm thick interfacial SiOx layer forms under the spin-coated MoOx films and that the MoO x as deposited is amorphous and sub-stoichiometric. Thermal annealing in air reduces the concentration of oxygen vacancies in the MoO x with stoichiometric films being achieved by annealing at 400 °C. The decay of minority carrier lifetime measurements with time demonstrates the importance of capping the films before measurements for reliable results.