Dynamic loadline analysis of AlGaN/GaN HEMTs
- Resource Type
- Conference
- Authors
- Green, B.M.; Kaper, V.S.; Tilak, V.; Shealy, J.R.; Eastman, L.F.
- Source
- Proceedings. IEEE Lester Eastman Conference on High Performance Devices High performance devices High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on. :443-452 2002
- Subject
- Components, Circuits, Devices and Systems
Aluminum gallium nitride
Gallium nitride
HEMTs
MODFETs
Analytical models
Surface resistance
Power generation
Signal analysis
Performance analysis
Electrical resistance measurement
- Language
Surface trapping has been identified as a mechanism for lower than expected output power for experimental AlGaN/GaN HEMTs devices. This paper presents dynamic loadline analysis as a means of understanding device behavior that limits large signal performance. From observations of measured data, a model for bias-dependent drain resistance caused by trap-induced space-charge in the ungated region on the drain side of the gate is proposed. This bias-dependent drain resistance model is implemented in conjunction with a Curtice-cubic analytical transistor model to simulate the observed behavior.