Investigation of Synergic Hydrogen Mitigation Technique for Top-Gate A-IGZO Thin-Film Transistors
- Resource Type
- Conference
- Authors
- Yan, Gangping; Song, Zhiyu; Xu, Haoqing; Yang, Shangbo; Niu, Chuqiao; Tian, Guoliang; Luo, Yanna; Zhang, Luoyun; Bao, Yunjiao; Xu, Gaobo; Yin, Huaxiang
- Source
- 2023 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2023 China. :1-3 Jun, 2023
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Buffer layers
Performance evaluation
Silicon compounds
Annealing
Hydrogen
Modulation
Logic gates
- Language
In this work, a simple hydrogen mitigation method for the top-gate amorphous In-Ga-Zn-O thin-film transistor (a-IGZO TFT) is proposed. The influences of synergic modulations between post-dielectric thermal treatment and Al2O3 buffer layer acting as oxygen-blockers are investigated to address hydrogen issues. Using the proposed optimization approach, the self-aligned channel annealing is successfully performed to realize $\gt104x$ increase in on-current of a-IGZO TFTs. These results provide useful guidance for high-performance a-IGZO devices in monolithic three-dimensional integration.