Accurate Nonlinear Resistive FET Modeling for IMD Calculations
- Resource Type
- Conference
- Authors
- Garcia, Jose A.; Pedro, Jose C.; Carvalho, Nuno B.; Mediavilla, Angel; Tazon, Antonio
- Source
- 1998 28th European Microwave Conference Microwave Conference, 1998. 28th European. 2:272-276 Oct, 1998
- Subject
- Fields, Waves and Electromagnetics
MESFETs
Taylor series
Intrusion detection
Microwave devices
Switches
Intermodulation distortion
Microwave FETs
Radio frequency
Voltage control
Telecommunications
- Language
This work discusses the nonlinear modeling procedures required for intermodulation distortion (IMD) calculations of MESFETs biased in the resistive (linear) region. An automatic full two-sided characterization of Ids(vgs, Vds) is compared against the previously published extraction of Ids(vds) in this problematic region. It is shown that this one-sided Taylor series extraction is insufficient for most applications of the FET in its triode zone, and thus an alternative method is proposed.