In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current
- Resource Type
- Conference
- Authors
- Ichikawa, Masayuki; Tanaka, Takahisa; Uchida, Ken; Miyao, Tomohisa; Tada, Munehiro; Ishikuro, Hiroki
- Source
- 2022 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2022 IEEE Latin American. :1-4 Jul, 2022
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Performance evaluation
MOSFET
Transient response
Quantum computing
Power demand
Cryogenics
CMOS technology
self-heating
cryogenic
CMOS
quantum computing
in-situ monitoring
- Language
This work proposes an evaluation technique of self-heating (SH) in a 65-nm bulk CMOS transistor at cryogenic temperature (4.2K). For the in-situ monitoring of self-heating in cryo-CMOS circuits, transient response of the subthreshold drain current is used, which makes it possible to estimate the temperature at on-state of MOSFETs. The relation between the temperature increase by self-heating and power consumption of MOSFET has been experimentally obtained, which will help a design of high performance cryo-CMOS circuits for quantum computer application.