Total Ionizing Dose Effects on Read Noise of MLC 3-D NAND Memories
- Resource Type
- Periodical
- Authors
- Surendranathan, U.; Wasiolek, M.; Hattar, K.; Fleetwood, D.M.; Ray, B.
- Source
- IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(3):321-326 Mar, 2022
- Subject
- Nuclear Engineering
Bioengineering
Radiation effects
Flash memories
Noise measurement
Ionizing radiation
Semiconductor device measurement
Error correction codes
Arrays
3-D NANDflash
error rate
ionizing radiation
memory controller
multi-level-cell (MLC)
noise
read-noise
single-event exposure
total ionizing dose (TID)
- Language
- ISSN
- 0018-9499
1558-1578
This article analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. The chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.