Gamma-Ray-Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories
- Resource Type
- Periodical
- Authors
- Surendranathan, U.; Kumari, P.; Wasiolek, M.; Hattar, K.; Boykin, T.; Ray, B.
- Source
- IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):733-739 May, 2021
- Subject
- Nuclear Engineering
Bioengineering
Radiation effects
Flash memories
Total ionizing dose
Nonvolatile memory
Micrometers
Gamma-rays
3-D NAND flash
error rate
ionizing radiation
memory controller
multi-level cell (MLC)
shared pages
single-event exposure
total ionizing dose
- Language
- ISSN
- 0018-9499
1558-1578
This article analyzes the data corruption pattern in the shared pages of multi-level cell (MLC) 3-D NAND memory under ionizing radiation from a Co-60 gamma-ray source for up to 20 krad(Si) dose. The results show that the radiation-induced error pattern between the shared pages follows a unique correlated behavior. We also find that the error locations within a given page remain uncorrelated, meaning that the occurrence of an error does not force a cluster of errors under ionizing radiation.