Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications
- Resource Type
- Conference
- Authors
- Seiler, Tim; Juttner, Maximilian; Herrmann, Tom; Zaka, Alban; Pirro, Luca; Hoentschel, Jan; Klix, Wilfried; Stenzel, Roland
- Source
- 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2019 Joint International EUROSOI Workshop and International Conference on. :1-3 Apr, 2019
- Subject
- Components, Circuits, Devices and Systems
Signal Processing and Analysis
Silicon-on-insulator
Logic gates
Transistors
Optimization
Power demand
Threshold voltage
Low-frequency noise
FDSOI
CMOS
Sentaurus TCAD
DGM
gm/ID
- Language
- ISSN
- 2472-9132
A comparison of CMOS devices with best in class noise behavior and low power consumption for analog/mixed signal applications has been achieved by extensive TCAD simulations. The intrinsic gain gm/ID of FDSOI transistors was optimized by several process adjustments. An advanced bulk device with improved noise behavior was used as a reference and different bias conditions were simulated. With certain layer optimizations the gm/ID was improved by 50% in the low power regime. An additional improvement up to 50% has been achieved by biasing the FDSOI device in double gate mode (DGM).