Influence of physical parameters on the quasi-saturation of a power SOI RF LDMOS
- Resource Type
- Conference
- Authors
- Luo, J.; Cao, G.; Spulber, O.; Hardikar, S.; Feng, Y.M.; Narayanan, E.M.S.; De Souza, M.M.
- Source
- ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575) Semiconductor electronics Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on. :314-318 2002
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Radio frequency
Silicon
Doping
Medical simulation
Neodymium
Voltage
Quasi-doping
Isolation technology
Body regions
Gallium arsenide
- Language
In this work, the influence of top silicon thickness T/sub si/, buried oxide thickness T/sub box/ and drift doping N/sub d/ on quasi-saturation in SOI RESURF LDMOS is investigated through extensive 2-D simulations. A physical insight on quasi-saturation in SOI structures with different top silicon thickness is provided. Furthermore the influence of Self-heating effect on quasi-saturation is also presented. The quasi-saturation current increases as the decrease in top silicon thickness up to T/sub si/ 1.0 /spl mu/m with the same drift dose. Beyond this value quasi-saturation current remains unchanged with T/sub si/. The analysis shows that the saturation of carrier velocity in the drift neutral region is the main cause for higher quasi-saturation current in SOI structures with T/sub si/ less than 1.0 /spl mu/m. Under optimum RESURF condition, reducing buried oxide increases the quasi-saturation current dramatically.