Non-volatile memory circuits for FIMS and TAS writing techniques on magnetic tunnelling junctions
- Resource Type
- Conference
- Authors
- Silva, Victor; Vestias, Mario P.; Neto, Horacio C.; Fernandes, Jorge R.
- Source
- 2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012) Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on. :809-812 Dec, 2012
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Magnetic tunneling
Generators
Junctions
Writing
Magnetic fields
Random access memory
Transistors
- Language
This paper presents, and compares, two circuits based on Magnetic RAM (MRAM) technology for use as configuration memory elements of coarse grained reconfigurable arrays. MRAM based memory cells provide non-volatility with cell areas and access speeds comparable to those of conventional static memories. Two scaled-down prototypes of a coarse grain reconfigurable array that employs MRAM based elements as configuration memory have been designed, manufactured and tested. One prototype employs Field Induced Magnetic Switching (FIMS) writing technique while the other prototype employs Thermally Assisted Switching (TAS) writing technique. Both prototypes are compared qualitatively and quantitatively and conclusions are drawn.