Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
- Resource Type
- Conference
- Authors
- Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. A.; Uzer, M; Mamat, M. H.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.
- Source
- 2014 2nd International Conference on Electrical, Electronics and System Engineering (ICEESE) Electrical, Electronics and System Engineering (ICEESE), 2014 International Conference on. :24-27 Dec, 2014
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Computing and Processing
Fields, Waves and Electromagnetics
General Topics for Engineers
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Zinc oxide
Films
II-VI semiconductor materials
Sensitivity
Conductivity
Gas detectors
Temperature sensors
AFM morphologies
electrical properties
Al-doped ZnO
methane gas
sensitivity
- Language
The atomic force microscopy (AFM) morphologies and electrical properties of the nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared at various thicknesses were investigated. The films were prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The sensitivity upon exposure to methane (CH 4 ) gas at room temperature was investigated. The results show that the lowest resistivity of 0.752 × 10 6 Ω-cm was obtained for the ZnO nanostructures prepared at thickness of 170 nm. It also display highest sensitivity value which is 30%.